Novotna Technology Corporation Japan (NTCJ) provides RF-GaN products are highly integrated PA modules with driver amplifier, Doherty amplifier and 50 Ω input and output matching.  These products greatly contribute to the miniaturization and high performance of 5G base transceiver station.

• Features
  

  -	Operating Frequency Range: N77/ N78/ N79
  -	Operating Drain Voltage (GaN): 28 V
  -	50 Ω input/ output
  -	Integrated Doherty circuit and bias circuit
  -	Gain at 8 W avg.: 26 dB
  -	Line up efficiency at  8 W avg.: 33%
  -	Doherty efficiency at 8 W avg.: 40%
  -	12 x 8 mm plastic surface mount package

• Specifications

  Room Temperature (Ta) = 25 ± 5 °C,

  Vbias = 5 V, Ven = 1.8 V, Vds-D = Vds-CA = Vds-PA = 28 V, Vgg = -7.5V, Vgs-PA*2 = -3.7V

  Freq. = 4900 MHz, In Nuvoton Test Fixture, 50 Ω system

   

• System Block Diagram