KLCB0200Y2WW
High power laser diode series
High-Power Blue Laser Diode (445nm,5.0W)
KLCB0200Y2WW
Overview
KLCB0200Y2WW emits 445 nm laser light and is assembled in a chip-on-submount (CoS) package. Its unique compound semiconductor process technology and low optical-loss structure enable high output power and high reliability, making it suitable for industrial use.
Features
- Transverse mode: Multi mode
- Wavelength: 445 nm (typ.)
- Package type: Chip on Submount (CoS) Package
- Rated optical output power: 5.0 W
- Operating case temperature (Tc) : 0 ~ +60 degrees C
- Emitter size: 45 μm x 1 μm
Applications
- Material Processing
- Bio Medical
- Display
- Other industrial use
Package
Absolute Maximum Ratings
| Item | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Operating current | Iop | 3.5 | A | CW |
| Reverse voltage | Vr | 5.0 | V | - |
| Operating temperature (Case) | Tc | 0 to +60 | °C | - |
| Storage temperature | Tstg | -40 to +85 | °C | - |
Electrical and Optical Characteristics
Tc=25°C, CW| Item | Symbol | Min. | Typ. | Max. | Unit | Condition |
|---|---|---|---|---|---|---|
| Threshold current | Ith | - | 0.35 | 0.50 | A | pulse |
| Optical output power | Po | 4.5 | 5.0 | - | W | Iop=3.2A |
| Operating voltage | Vop | - | 4.6 | 5.5 | V | Iop=3.2A |
| Wavelength | λ | 438 | 445 | 452 | nm | Iop=3.2A |
| Beam divergence |
θh | 6 | 9 | 14 | deg | Iop=3.2A |
| θv | 40 | 45 | 50 | deg | Iop=3.2A |
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